EUV Optics – How far can we extent Moore’s Law
Dr. Reiner Garreis
Carl Zeiss SMT GmbH
The advancement of the digital world is driven by the progress in computer chip technology, where it is required to increase the functionality and speed with sustainable energy consumption at reduced cost per function. The method of choice to achieve this is Moore`s law of doubling the number of transistors per area every two years. Optical lithography supported Moore’s law by providing ever higher resolution using wavelengths up to 193 nm. Now it is time to make a big leap forward to EUV photons at 13,5 nm.
We will present here the current achievements of EUV Lithography systems and show the path into the future by extending the EUV usage down beyond 10 nm resolution. In particular, we place emphasis on the challenges of High NA EUV projection optics, the interaction of the optical system with the EUV mask, the impact of central obscurations and anamorphic magnifications.
- Studied Physics at the University of Karlsruhe, Germany and University of Cambridge England.
- PHD in Theoretical Elementary Particle Physics at the University of Karlsruhe
- 1989 Space and Astronomy Department at Carl Zeiss Oberkochen
- 1996 Lithography department as project manager and as head of System Engineering.
- development and system definition of Lithography optics from I-Line to 193nm as well as 157 nm and EUV.
- 2005 promoted to Senior Principal